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A Study on diffusion barrier materials and electromigration of Cu |
- There are many materials which have been studied and developed for being a diffusion barrier against Cu, for example, nitrides of transition metals such as TaN, TiN, TiB2, and so on.
- Electromigration is a major reliability concern in intergrated circuits due to the aggressive scaling of interconnect dimensions and the increasing current densities at operation.
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PVD system for the metal-film growing | |
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