HOME > Publications
 
ÀÛ¼ºÀÏ : 15-01-20 15:04
2003
 ±Û¾´ÀÌ : Master
Á¶È¸ : 1,355  
Effect of growth interruption on In-rich InGaN/GaN single quantum well structures , S. Y. Kwon, H. J. Kim, H. Na, H. C. Seo, H. J. Kim, Y. Shin, Y. W. Kim, S. Yoon, H. J. Oh, C. Sone, Y. Park, Y. P. Sun, Y. H. Cho, and E. Yoon,  5th International Conference on Nitride Semiconductors (Icns-5), Proceedings, 2830 (2003).

 
   
 

¼­¿ï½Ã °ü¾Ç±¸ °ü¾Ç·Î1 ¼­¿ï´ëÇб³ 31µ¿ 411È£
½Ç½Ã°£°üÂûÀüÀÚÇö¹Ì°æ ¿¬±¸½Ç
Tel : 02-878-5010  |  Fax : 02-878-5010
COPYRIGHT 2014. ALL RIGHT RESERVED  
In-situ Electron Microscopy Laboratory
31-411 Dept. of Materials Science and Engineering
Seoul National University
Gwanak-ro1 Gwanak-gu Seoul, Republic of Korea
Äü¸Þ´º