ÀÛ¼ºÀÏ : 15-01-20 15:04
2003
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±Û¾´ÀÌ :
Master
Á¶È¸ : 1,355
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Effect of growth interruption on In-rich InGaN/GaN single quantum well structures , S. Y. Kwon, H. J. Kim, H. Na, H. C. Seo, H. J. Kim, Y. Shin, Y. W. Kim, S. Yoon, H. J. Oh, C. Sone, Y. Park, Y. P. Sun, Y. H. Cho, and E. Yoon, 5th International Conference on Nitride Semiconductors (Icns-5), Proceedings, 2830 (2003).
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In-situ Electron Microscopy Laboratory 31-411 Dept. of Materials Science and Engineering Seoul National University Gwanak-ro1 Gwanak-gu Seoul, Republic of Korea |
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