ÀÛ¼ºÀÏ : 15-09-30 13:27
2015
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±Û¾´ÀÌ :
Master
Á¶È¸ : 2,455
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Interface characteristics of spin-on-dielectric SiOx-buffered passivation
layers for AlGaN/GaN high electron mobility transistors ., P. S. Ko, K. S. Park, Y. C. Yoon,
M. H. Sheen, and S. D. Kim, Thin Solid Films , 589, 838-843.(2015)
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In-situ Electron Microscopy Laboratory 31-411 Dept. of Materials Science and Engineering Seoul National University Gwanak-ro1 Gwanak-gu Seoul, Republic of Korea |
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