HOME > Publications
 
ÀÛ¼ºÀÏ : 15-02-02 20:18
2013
 ±Û¾´ÀÌ : Master
Á¶È¸ : 1,751  
Characterization of deep levels in GaInP on Ge and Ge-on-Si substrates by photoluminescence and cathodoluminescence, C. Yang, S. Lee, K. W. Shin, S. Oh, D. Moon, S. D. Kim, Y. W. Kim, C. Z. Kim, W. K. Park, W. J. Choi, J. Park, and E. Yoon,  J Cryst Growth 370, 168 (2013).

 
   
 

¼­¿ï½Ã °ü¾Ç±¸ °ü¾Ç·Î1 ¼­¿ï´ëÇб³ 31µ¿ 411È£
½Ç½Ã°£°üÂûÀüÀÚÇö¹Ì°æ ¿¬±¸½Ç
Tel : 02-878-5010  |  Fax : 02-878-5010
COPYRIGHT 2014. ALL RIGHT RESERVED  
In-situ Electron Microscopy Laboratory
31-411 Dept. of Materials Science and Engineering
Seoul National University
Gwanak-ro1 Gwanak-gu Seoul, Republic of Korea
Äü¸Þ´º