ÀÛ¼ºÀÏ : 15-02-02 20:18
2013
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±Û¾´ÀÌ :
Master
Á¶È¸ : 1,751
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Characterization of deep levels in GaInP on Ge and Ge-on-Si substrates by photoluminescence and cathodoluminescence, C. Yang, S. Lee, K. W. Shin, S. Oh, D. Moon, S. D. Kim, Y. W. Kim, C. Z. Kim, W. K. Park, W. J. Choi, J. Park, and E. Yoon, J Cryst Growth 370, 168 (2013).
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In-situ Electron Microscopy Laboratory 31-411 Dept. of Materials Science and Engineering Seoul National University Gwanak-ro1 Gwanak-gu Seoul, Republic of Korea |
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