ÀÛ¼ºÀÏ : 15-02-02 20:13
2012
|
|
±Û¾´ÀÌ :
Master
Á¶È¸ : 1,856
|
Low-temperature formation of epitaxial graphene on 6H-SiC induced by continuous electron beam irradiation, H. Go, J. Kwak, Y. Jeon, S. D. Kim, B. C. Lee, H. S. Kang, J. H. Ko, N. Kim, B. K. Kim, J. W. Yoo, S. Y. Kim, Y. W. Kim, S. Y. Kwon, and K. Park, Appl Phys Lett 101 (9) (2012).
|
|
|
|
|
|
¼¿ï½Ã °ü¾Ç±¸ °ü¾Ç·Î1 ¼¿ï´ëÇб³ 31µ¿ 411È£ ½Ç½Ã°£°üÂûÀüÀÚÇö¹Ì°æ ¿¬±¸½Ç Tel : 02-878-5010 | Fax : 02-878-5010
COPYRIGHT 2014. ALL RIGHT RESERVED |
In-situ Electron Microscopy Laboratory 31-411 Dept. of Materials Science and Engineering Seoul National University Gwanak-ro1 Gwanak-gu Seoul, Republic of Korea |
|
|