ÀÛ¼ºÀÏ : 15-01-20 18:18
2007
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±Û¾´ÀÌ :
Master
Á¶È¸ : 1,773
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Substrate pit formation and surface wetting during thermal annealing of strained-Si/relaxed-Si0.78Ge0.22 heterostructure, C. H. Jang, S. I. Paik, Y. W. Kim, and N. E. Lee, Appl Phys Lett 90 (9) (2007).
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In-situ Electron Microscopy Laboratory 31-411 Dept. of Materials Science and Engineering Seoul National University Gwanak-ro1 Gwanak-gu Seoul, Republic of Korea |
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