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작성일 : 15-01-21 20:37
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2009
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글쓴이 :
Master
 조회 : 1,779
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Atomic layer etching of ultra-thin HfO2 film for gate oxide in MOSFET devices, J. B. Park, W. S. Lim, B. J. Park, I. H. Park, Y. W. Kim, and G. Y. Yeom, J Phys D Appl Phys 42 (5) (2009).
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서울시 관악구 관악로1 서울대학교 31동 411호
실시간관찰전자현미경 연구실
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In-situ Electron Microscopy Laboratory
31-411 Dept. of Materials Science and Engineering
Seoul National University
Gwanak-ro1 Gwanak-gu Seoul, Republic of Korea |
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