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작성일 : 15-01-20 18:18
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2007
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글쓴이 :
Master
 조회 : 1,791
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Substrate pit formation and surface wetting during thermal annealing of strained-Si/relaxed-Si0.78Ge0.22 heterostructure, C. H. Jang, S. I. Paik, Y. W. Kim, and N. E. Lee, Appl Phys Lett 90 (9) (2007).
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서울시 관악구 관악로1 서울대학교 31동 411호
실시간관찰전자현미경 연구실
Tel : 02-878-5010 | Fax : 02-878-5010
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In-situ Electron Microscopy Laboratory
31-411 Dept. of Materials Science and Engineering
Seoul National University
Gwanak-ro1 Gwanak-gu Seoul, Republic of Korea |
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