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작성일 : 15-01-20 18:04
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2005
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글쓴이 :
Master
 조회 : 1,907
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Formation of nickel silicide layer on strained-Si0.83Ge0.17/Si(001) using a sacrificial Si layer and its morphological instability, C. H. Jang, D. O. Shin, S. I. Baik, Y. W. Kim, Y. J. Song, K. H. Shim, and N. E. Lee, Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers 44 (7A), 4805 (2005).
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서울시 관악구 관악로1 서울대학교 31동 411호
실시간관찰전자현미경 연구실
Tel : 02-878-5010 | Fax : 02-878-5010
COPYRIGHT 2014. ALL RIGHT RESERVED |
In-situ Electron Microscopy Laboratory
31-411 Dept. of Materials Science and Engineering
Seoul National University
Gwanak-ro1 Gwanak-gu Seoul, Republic of Korea |
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