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작성일 : 15-09-30 13:27
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2015
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글쓴이 :
Master
 조회 : 2,493
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Interface characteristics of spin-on-dielectric SiOx-buffered passivation
layers for AlGaN/GaN high electron mobility transistors ., P. S. Ko, K. S. Park, Y. C. Yoon,
M. H. Sheen, and S. D. Kim, Thin Solid Films , 589, 838-843.(2015)
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서울시 관악구 관악로1 서울대학교 31동 411호
실시간관찰전자현미경 연구실
Tel : 02-878-5010 | Fax : 02-878-5010
COPYRIGHT 2014. ALL RIGHT RESERVED |
In-situ Electron Microscopy Laboratory
31-411 Dept. of Materials Science and Engineering
Seoul National University
Gwanak-ro1 Gwanak-gu Seoul, Republic of Korea |
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